Electronic device and method for manufacturing electronic device

ABSTRACT

An electronic device is provided with an improved reliability and a reduced contamination in a functional unit of an exposed element, and a method for manufacturing thereof is also provided. An electronic device includes a light receiving element, a frame member composed of a first resin provided so as to surround a photo acceptor unit of the light receiving element, and an encapsulating resin layer composed of a second resin and filling a periphery of the frame member. The photo acceptor unit of the light receiving element is exposed in a space surrounded by the frame member. The upper surface of the frame member and the upper surface of the encapsulating resin layer form a common plane, or the upper surface of the frame member is higher than the upper surface of the encapsulating resin layer.

The present application is based on Japanese patent applications No.2007-195683 and No. 2007-321587, the contents of which are incorporatedhereinto by reference.

BACKGROUND

1. Technical Field

The present invention relates to an electronic device and a method formanufacturing an electronic device.

2. Related Art

Electronic devices having exposed portions in functional elements arebeing developed for practical uses to meet the needs in recenttechnological advances. The developments of such type of devices arebased on requirements for reducing an attenuation of an optical signaland an improved moisture resistance of electronic devices for meetingwith a reflow condition in mounting a lead free by employing a blackresin in an electronic device that converts an optical signal into anelectrical signal and directly introduces an optical signal entered froman outside of the electronic device into a photo acceptance of theoptical device. In particular, in optical recording technologiesutilizing blue light as an optical signal, epoxy resins employed inlight-receiving devices for transforming the optical signals intoelectrical signals are deteriorated by the blue light to be in failurecondition, and therefore, the above-mentioned electronic devices havingexposed portions in functional elements, in which epoxy resin iseliminated from the optical path, are required. In addition, theelectronic devices having such structure include movable elements infunctional elements such as micro electro-mechanical systems (MEMS),electric acoustic filters and the like, and the above-described types ofelectronic devices are expected to be adopted for devices having movableelements that cannot be encapsulated with a resin or for solid-stateimage sensing elements for cameras.

FIG. 12 is a cross-sectional view, illustrating a solid-state imagingdevice described in Japanese Patent Laid-Open No. 2001-257,334. As shownin FIG. 12, a solid-state imaging device includes a solid-state imagesensing element chip 81, an epoxy resin sheet 84 having an openingportion 83 formed only in a photo acceptance unit (not shown) adhered onthe solid-state image sensing element chip 81 with an adhesive agent 85,and a transparent member 86 adhered on the epoxy resin sheet 84 with theadhesive agent 85 and serving as a flat plate portion. The solid-stateimage sensing element chip 81 is die-bonded to a package or substrate810, and certain couplings between a pad portion 81 a of the solid-stateimage sensing element chip 81 and the package or substrate 810 are madeby bonding wires 811 to achieve a practical use thereof, and thenperipheral portions thereof including bonding wire-coupling portionsexcept hermetic seals are packaged with an encapsulating resin 812. Atransparent member 86 functions as a protective film for a photoacceptor.

FIGS. 13, 14 are cross-sectional views, illustrating a solid-stateimaging device described in Japanese Patent Laid-Open No. H07-202,152(1995). As shown in FIG. 13, a solid-state imaging device includes asolid-state image sensing element chip 91, in which only a photoacceptance area 92 provided with a micro lens 93 is hermetically sealedwith a transparent encapsulating member 94. The solid-state imagesensing element chip 91 is directly adhered onto a substrate 921 by adie-bonding, and after the electrodes of the solid-state image sensingelement chip 91 is connected to the electrodes of the substrate 921 bythe bonding wires 922, the chip surfaces except the transparentencapsulating member 94 provided only in the photo acceptance area 92 ofthe solid-state image sensing element chip 91 and the coupling portionswith the bonding wires 922 are encapsulated with the encapsulating resin923. As shown in FIG. 14, the transparent encapsulating member 911includes a flat plate portion 911 a and a frame 911 b and is configuredto form the flat plate portion 911 a on the upper surface of the frame911 b. The transparent encapsulating member 911 provides a protection ofthe photo acceptance area 92, and the flat plate portion 911 a functionsas a protective film. A transparent encapsulating member 911 shown inFIG. 14 corresponds to the transparent encapsulating member 94 shown inFIG. 13.

Besides, the upper surface of the encapsulating resin 812 is located tobe higher than the upper surface of the epoxy resin sheet 84 in thesolid-state imaging device described in reference to FIG. 12. Therefore,the side surfaces of the transparent member 86 formed on the epoxy resinsheet 84 are covered with the encapsulating resin 812. This provides anadhesion of the side surface of the transparent member 86 with theencapsulating resin 812, and thus stripping of the transparent member 86is difficult.

In the solid-state imaging device described in reference to FIGS. 13 and14, the upper surface of the encapsulating resin 923 is located to behigher than the upper surface of the frame 911 b. Since the side surfaceof the transparent encapsulating member 94 is covered with theencapsulating resin 923 as shown in FIG. 13, the side surface of theflat plate portion 911 a shown in FIG. 14 is covered with theencapsulating resin 923 (not shown). This causes an adhesion of the sidesurface of the flat plate portion 911 a with the encapsulating resin923, causing a difficulty in stripping the flat plate portion 911 a. Inaddition, since the dimensional area of a surface for adhesion of theflat plate portion 911 a is limited by the dimensional area of the uppersurface of the frame 911 b, it is difficult to provide an increaseddimensional area for adhesion to achieve higher adhesive force.

SUMMARY

According to one aspect of the present invention, there is provided anelectronic device, comprising: an element; a frame member composed of afirst resin provided so as to surround a functional unit of the element;and a resin layer composed of a second resin and filling a periphery ofthe frame member, wherein the functional unit of the element is exposedin a space surrounded by the frame member, and wherein an upper surfaceof the frame member and an upper surface of the resin layer form acommon plane, or the upper surface of the frame member is located to behigher than the upper surface of the resin layer.

In such electronic device, the upper surface of the frame member and theupper surface of the resin layer are coplanar, or the upper surface ofthe frame member is located to be higher than the upper surface of theresin layer. More specifically, attaching and removing of the protectivefilm that covers the upper surface of frame member and the upper surfaceof the resin layer can be facilitated, so that a reduced contaminationin the functional unit can be achieved, providing an electronic devicewith an improved reliability.

According to another aspect of the present invention, there is providedan electronic device, comprising: an element; a frame member composed ofa first resin provided so as to surround a functional unit of theelement; and a resin layer composed of a second resin and filling aperiphery of the frame member, wherein the functional unit of theelement is exposed in a space surrounded by the frame member, andwherein an upper surface of the frame member is located to be higherthan an upper surface of the resin layer.

In such electronic device, the upper surface of the frame member islocated to be higher than the upper surface of the resin layer. Morespecifically, attaching and removing of the protective film that coversthe upper surface of frame member and the upper surface of the resinlayer can be facilitated, so that a reduced contamination in thefunctional unit can be achieved, providing an electronic device with animproved reliability.

According to further aspect of the present invention, there is provideda method for manufacturing an electronic device, including: forming aresin film over a wafer, which has a plurality of elements formedtherein; patterning the resin film to form a frame member, which iscomposed of a first resin and is provided to surround a functional unitof the element; and providing an encapsulation, comprising: installingthe element over a base member; pressing molding surfaces ofencapsulating metal molds against an upper surface of the frame memberand a lower surface of the base member, respectively; and injecting asecond resin into portions of spaces surrounded by the molding surfaceof the encapsulating metal mold except the portion surrounded by theframe member to fill a periphery of the frame member.

Since the molding surface of the encapsulating metal mold is pressedagainst the upper surface of the frame member and the lower surface ofthe base member, and the second resin is injected into portions ofspaces surrounded by the molding surface of the encapsulating metal moldexcept the portion surrounded by the frame member to fill a periphery ofthe frame member in such method for manufacturing the electronic device,the upper surface of the frame member and the upper surface of the resinlayer are formed to be coplanar. This allows easy attaching and removingof the protective film that covers the plane formed of the upper surfaceof frame member and the upper surface of the resin layer can befacilitated, so that a reduced contamination in the functional unit canbe achieved, providing an electronic device with an improvedreliability. This provides the electronic device with an improvedreliability by a simple process.

According to the present invention, an electronic device can be providedwith an improved reliability and a reduced contamination in a functionalunit of an exposed element, and a method for manufacturing thereof isalso provided.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, advantages and features of the presentinvention will be more apparent from the following description ofcertain preferred embodiments taken in conjunction with the accompanyingdrawings, in which:

FIG. 1A is a perspective view, illustrating an electronic device infirst embodiment, and FIG. 1B is a cross-sectional view of theelectronic device shown in FIG. 1A along line I-I′;

FIGS. 2A to 2D are cross-sectional views, illustrating a process formanufacturing the electronic device in first embodiment;

FIGS. 3A to 3C are cross-sectional views, illustrating the process formanufacturing the electronic device in first embodiment;

FIGS. 4A and 4B are cross-sectional views, illustrating the process formanufacturing the electronic device in first embodiment;

FIGS. 5A to 5C are cross-sectional views, illustrating the process formanufacturing the electronic device in first embodiment;

FIG. 6A is a perspective view, illustrating another electronic device infirst embodiment, and FIG. 6B is a cross-sectional view of theelectronic device shown in FIG. 6A along line II-II′;

FIGS. 7A to 7C are cross-sectional views, illustrating a process formanufacturing the electronic device in second embodiment;

FIGS. 8A to 8D are cross-sectional views, illustrating a process formanufacturing the electronic device in third embodiment;

FIG. 9A and FIG. 9B are cross-sectional views, illustrating a processfor manufacturing the electronic device in fourth embodiment;

FIG. 10A is a perspective view, illustrating an electronic device infifth embodiment, and FIG. 10B is a cross-sectional view of theelectronic device shown in FIG. 10A along line III-III′;

FIGS. 11A to 11G are cross-sectional views, illustrating a process formanufacturing the electronic device in sixth embodiment;

FIG. 12 is a cross-sectional view, illustrating a conventionalelectronic device;

FIG. 13 is a cross-sectional view, illustrating a conventionalelectronic device; and

FIG. 14 is a cross-sectional view, illustrating a conventionalelectronic device.

DETAILED DESCRIPTION

The invention will be now described herein with reference toillustrative embodiments. Those skilled in the art will recognize thatmany alternative embodiments can be accomplished using the teachings ofthe present invention and that the invention is not limited to theembodiments illustrated for explanatory purposed.

Exemplary implementations for electronic devices and methods formanufacturing thereof according to the present invention will bedescribed in detail as follows in reference to the annexed figures. Inall figures, an identical numeral is assigned to an element commonlyappeared in the figures, and the detailed description thereof will notbe repeated.

First Embodiment

FIG. 1A is a perspective view, illustrating an electronic device infirst embodiment of the present invention, and FIG. 1B is across-sectional view, broken along line I-I′ in FIG. 1A.

As shown in FIG. 1B, an electronic device 108 includes a light receivingelement 101, a frame member 102 composed of a first resin provided so asto surround a photo acceptor unit 101 b (functional unit) of the lightreceiving element 101, and an encapsulating resin layer 106 composed ofa second resin and filling a periphery of the frame member 102. Thoughit is not shown in FIG. 1B, the electronic device 108 further includes aprotective film that covers a plane formed by an upper surface of theframe member 102 and an upper surface of the encapsulating resin layer106. Further, a light receiving element 101 is electrically coupled tolead frames 104 through metal filaments 105.

The upper surface of the frame member 102 and the upper surface of theencapsulating resin layer 106 form a common plane. More specifically,since the upper surface of the frame member 102 and the upper surface ofthe encapsulating resin layer 106 are coplanar, an adhesion and astripping of a protective film that covers the upper surface of theframe member 102 and the upper surface of the encapsulating resin layer106 can be easily presented.

A photo acceptor unit 101 b serving as a functional unit is formed inthe surface of the light receiving element 101. More specifically, thephoto acceptor unit 101 b is exposed in the surface of the lightreceiving element 101.

The frame member 102 is formed on the light receiving element 101, andis provided so as to surround the photo acceptor unit 101 b. The photoacceptor unit 101 b of the light receiving element 101 is exposed in aspace surrounded by the frame member 102.

A height of the frame member 102 is designed to be 0.08 mm. Preferableheight of the frame member 102 may be equal to or larger than 0.05 mm,and more preferably equal to or larger than 0.1 mm. Such range of theheight provides prevention from a contact of the metal filament 105coupled between the lead frame 104 and the predetermined position of thelight receiving element 101 with encapsulating metal molds 111 a and 111b that are employed in the manufacturing process for the electronicdevice 108 (see FIG. 4A). Therefore, the encapsulating metal mold 111 acan be strongly adhered to the upper surface of the frame member 102,preventing the encapsulating resin layer 106 from a permeation into theinside of the frame member 102. Here, the height of the frame member 102may be determined as a vertical length from the upper surface of thelight receiving element 101 to the upper surface of the frame member102, and equivalent to a thickness of the resin film composed of thefirst resin.

Preferable elastic modulus of the frame member 102 may be within a rangeof from 1 GPa to 6 GPa at 20 degree C. and within a range of from 10 MPato 3 GPa at 200 degree C. The range of from 1 GPa to 6 GPa at 20 degreeC. provides a function of the frame member 102 as protecting the photoacceptor unit 101 b of the electronic device 108. The range of from 10MPa to 3 GPa at 200 degree C. provides a function of the frame member102 as a cushioning material, as the frame member 102 is elasticallyslightly deformed when the frame member 102 is pressed to theencapsulating metal molds 111 a and 111 b in the process formanufacturing the electronic device 108, so that the photo acceptor unit101 b is protected from the external pressure. Here, the elastic modulusof the frame member 102 means an elastic modulus in the condition thatthe first resin is completely cured with a light and a heat.

The frame member 102 is formed of the first resin. The first resin is acured product of a resin material that is curable by a light and a heat.The resin materials that are curable by a light and a heat includephoto-reactive resins such as acrylic resins and heat-reactive resinssuch as epoxy resins.

The encapsulating resin layer 106 is formed of the second resin. Thesecond resin is an encapsulating resin that is employed forencapsulating the electronic device 108. The upper surface of the framemember 102 and the upper surface of the encapsulating resin layer 106totally form a flat surface.

A method for manufacturing the electronic device in first embodimentwill be described in reference to FIG. 2A to FIG. 6B. FIG. 2A to FIG. 5Care cross-sectional views, illustrating a process for manufacturing theelectronic device in first embodiment. FIG. 6A is a perspective view,illustrating the electronic device in first embodiment, and FIG. 6B is across-sectional view broken along line II-II′ in FIG. 6A.

First of all, as shown in FIG. 2A, the wafer 101 a is prepared. Suchwafer 101 a includes a plurality of light receiving elements 101 formedtherein, and the photo acceptor units 101 b are exposed over the surfaceof the light receiving element 101. Here, among the light receivingelements 101 arranged in the wafer 101 a, only two light receivingelements 101 are illustrated in FIG. 2A, and thus only two photoacceptor units 101 b are exposed.

Next, as shown in FIG. 2B, the resin film 102 a (first resin) is formedon the light receiving element 101 (wafer 101 a). Here, the resin film102 a is a film having a uniform thickness distribution. The reason foremploying such film-form resin film 102 a is to form a resin film havinga uniform film thickness of 0.05 mm or thicker over the entire wafer 101a. More specifically, a lower viscosity resin should be employed forobtaining uniform thickness of the film over the entire wafer 101 a in acase that a liquid resin is employed for the resin film 102 a, whichleads to a difficulty in obtaining a sufficient film thickness of 0.05mm due to its lower viscosity. On the contrary, a formation of a filmhaving a thickness of 0.05 mm or larger over the entire wafer 101 a witha liquid resin requires a use of a higher viscosity resin, which leadsto an increased viscous resistance during the process for coatingthereof over the wafer 101 a due to its higher viscosity, causing anincreased variation in the thickness of the coated film, such that it isdifficult to obtain a uniform film thickness. Consequently, the use ofthe film-form resin film 102 a achieves forming the resin film 102 awith a uniform film thickness of 0.05 mm or thicker. In the presentembodiment, the entire wafer 101 a is covered with the resin film 102 a.The thickness of the resin film 102 a is 0.08 mm. This configurationallows obtaining the frame member 102 having the height of 0.08 mm.

Subsequently, as shown in FIG. 2C, an alignment is performed so that thephoto acceptor unit 101 b is disposed within an inner diameter of acylindrical portion formed in the upper surface of the exposure mask103, and then an exposure is performed to pattern the resin film 102 aso as to form the frame member 102.

Further, as shown in FIG. 2D, a developing process is performed toremove portions of the resin film 102 a except the frame members 102, sothat the frame members 102 is formed so as to surround the photoacceptor units 101 b. As described above, the frame members 102 can beformed by using a photolithographic process. Thus, a contact of theencapsulating resin layer 106 against the photo acceptor unit 101 b iscompletely eliminated, thereby preventing the encapsulating resin layer106 from remaining in the inside of the frame member 102. In addition toabove, the resin composing the frame member 102 is not completely curedjust after the developing process is completed, providing a weakadhesion between the frame member 102 and the wafer 101 a or in otherwords between the frame member 102 and the light receiving elements 101with a weak adhesion force, and not providing a firm adhesion.

Subsequently, the frame member 102 having the wafer 101 a thereon isthermally processed to completely cure the frame member 102, providing afirm adhesion the frame member 102 and the wafer 101 a or in other wordsbetween the frame member 102 and the light receiving elements 101. Sinceno geometric change is caused in the frame member 102 by such thermalprocessing, the geometry of the frame member 102 is similar to thegeometry of the frame member 102 shown in FIG. 2D.

Subsequently, as shown in FIG. 3A, the individual light receivingelements 101 are diced out from the wafer 101 a to obtain the lightreceiving elements 101 having the frame members 102.

As shown in FIG. 6A, the frame member 102 is formed to form acylindrical shape having a hollow portion in the inside of the framemember. Here, the available geometry of the frame member 102 is notlimited to a cylindrical geometry, and other column or prism such as anelliptical column or a square pole may alternatively be employed so asto form a frame around the photo acceptor unit 101 b, depending on thegeometry of the photo acceptor unit 101 b. Further, since the upside ofthe photo acceptor unit 101 b is provided with a hollow portion in theinside of the frame member 102 as shown in FIG. 6B, the photo acceptorunit 101 b is exposed in the surface of the light receiving element 101.Here, an elastic modulus of the frame member 102 is controlled to beabout 2.4 GPa at an ambient temperature, and about 15 MPa at atemperature of 200 degree C. The elastic modulus of the frame member 102may be appropriately adjusted by suitably selecting a type of the resinmaterial that is curable by a light and a heat or a content ratio ofadded agents such as a curing agent and the like, or a processconditions such as a curing light intensity or a curing temperature.

Subsequently, as shown in FIG. 3B, the light receiving element 101 isadhered in a predetermined position on the lead frame 104 by an adhesiveagent. Subsequently, as shown in FIG. 3C, the light receiving elements101 are electrically coupled to the associated lead frames 104 inrespective predetermined positions by metal filaments 105.

Subsequently, as shown in FIG. 4A, encapsulating metal molds 111 a and111 b having flat molding surfaces are prepared, and then the lightreceiving elements 101 on the lead frame 104 shown in FIG. 4B are fixedin predetermined positions of the encapsulating metal mold 111 a and 111b. Subsequently, the molding surface of the encapsulating metal mold 111a compressively contacts with the upper surface of the frame member 102,and the molding surface of the encapsulating metal mold 111 bcompressively contacts with the lower surface of the lead frame 104.More specifically, a gap between the upper surface of the frame member102 and the molding surface of the encapsulating metal mold 111 a and agap between the lower surface of the lead frame 104 and the moldingsurface of the encapsulating metal mold 111 b are reduced to be minimum,providing close contacts therebetween.

Subsequently, as shown in FIG. 4A, staying at the condition of thecompressive-contact, an encapsulating resin melted by a heat (secondresin) is injected in spaces surrounded by the molding surfaces of theencapsulating metal molds 111 a and 111 b except the space surrounded bythe frame member 102. This achieves forming the encapsulating resinlayer 106 filling the periphery of the frame member 102. Here, anenclosed region surrounded by the frame member 102 and the encapsulatingmetal mold 111 a is formed in the upside of the photo acceptor unit 101b. Further, the molding surface of the encapsulating metal mold 111 aand the upper surfaces of the frame member 102 are closely contactedwith an external force by a clamping pressure, and the light receivingelement 101 and the frame member 102 are strongly adhered as describedabove. In such case, if the frame member 102 has an elastic moduluswithin a range of from 1 GPa to 6 GPa at 20 degree C. and within a rangeof from 10 MPa to 3 GPa at 200 degree C., the frame member 102 itselfcan be suitably elastically-deformed by a clamping pressure of theencapsulating metal mold to absorb the external force of such clampingpressure, thereby providing a protection for the light receiving element101. Further, such elastic deformation may also create an opposing forcefor closely contacting the frame member 102 against the encapsulatingmetal mold 111 a. Thus, an unwanted flow of the encapsulating resin intothe interior of the frame member 102 or in other words into the enclosedregion formed in the upside of the photo acceptor unit 101 b can beprevented. In order to provide an increased adhesive force of theencapsulating metal mold 111 a by the elastic deformation of the framemember 102 as described above, the design may be presented so that theheight of the upper surface of the frame member 102 from the uppersurface of the encapsulating resin layer 106 is within a range of from 0mm to 0.05 mm. When the upper surface of the frame member 102 isdesigned to be higher than the upper surface of the encapsulating resinlayer 106 by 0.05 mm or larger, the external force due to the clampingpressure of the encapsulating metal mold 111 a is increased, adeformation of the frame member 102 may lead to a plastic deformation,causing a break of the frame member 102. On the contrary, if the uppersurface of the frame member 102 is lower than the upper surface of theencapsulating resin layer 106, or in other words, if the height of theupper surface of the frame member 102 is lower than the height of theupper surface of the encapsulating resin layer 106 (lower than 0 mmlevel), causing an unwanted flow of the encapsulating resin has in theinside of the frame member 102.

Subsequently, the encapsulating metal molds 111 a and 111 b are removedto obtain the light receiving element 101, in which the level of theupper surface of the frame member 102 is the same as the level of theupper surface of the encapsulating resin 106, as shown in FIG. 4B. Morespecifically, a plurality of light receiving elements 101 on the leadframe 104 are totally encapsulated.

Subsequently, as shown in FIG. 5A, a protective tape 107 is formed tocover the upper surface of the frame member 102 and the upper surface ofthe encapsulating resin layer 106. The protective tape 107 serves asprotecting the photo acceptor units 101 b. Although the material for theprotective tape 107 are not particularly limited to any specificmaterial, a strippable resin having a heat resistance at a temperatureof not lower than its reflow temperature may be typically employed.

Subsequently, as shown in FIG. 5B, a dicing into the respective lightreceiving elements 101 is performed to obtain the electronic device 108having the desired geometry.

Then, the electronic device 108 is coupled to the base substrate 109having the essential electric circuits formed therein by a solder 110with a reflow process. The protective tape 107 is then removed to obtainthe electronic device 108 having the installed devices FIG. 5C.

Here, the electronic device 108 is a device having a passive elementand/or an active element formed on the surface of the semiconductorsubstrate or the glass substrate.

Advantageous effects obtainable by employing the configuration of thepresent embodiment will be described. The electronic device 108 isconfigured to have the upper surface of the frame member 102 and theupper surface of encapsulating resin layer 106, both of which form acommon plane. According to electronic device 108 having suchconfiguration, easy adhesion and removal of the protective tape 107 thatcovers the upper surface of the frame member 102 and the upper surfaceof the encapsulating resin layer 106 can be achieved. Therefore, acontamination in the photo acceptor unit 101 b can be reduced. Since theprotective tape 107 disposed on the optical path of the exposed photoacceptor unit 101 b can be easily eliminated in the use of theelectronic device 108, an attenuation of the optical signal can beprevented. Thus, the electronic device 108 having an improvedreliability can be achieved.

Further, the protective tape 107 is removed after the electronic device108 is coupled to the base substrate 109 in the process formanufacturing the electronic device 108. Therefore, a contamination inthe photo acceptor unit 101 b by the contaminants entered in the insideof the frame member 102 can be inhibited during the installation of theelectronic device 108 onto the base substrate 109.

In the method for manufacturing of electronic device 108 includes theflat molding surfaces of the encapsulating metal mold 111 a and 111 bare pressed against the upper surface of the frame member 102 and thelower surface of the lead frame 104, and the encapsulating resin isinjected into the spaces surrounded by the molding surfaces of theencapsulating metal molds 111 a and 111 b except the space surrounded bythe frame member 102 to form the encapsulating resin layer 106 thatfills the periphery of the frame member 102. Therefore, the structure,in which the upper surface of the frame member 102 and the upper surfaceof the encapsulating resin layer 106 form a common plane, can beobtained by a simple process. Thus, an improved productivity of theelectronic devices 108 can be achieved.

Further, the use of the resin film 102 a having uniform thicknessdistribution can provide the frame member 102 having the uniform heightdistribution over the entire surface of the wafer 101 a. This allowsreducing the variation in the height of the frame member 102 on thelight receiving element 101, and providing the encapsulating in oneprocess. Thus, an improved productivity of the electronic devices 108can be achieved.

Further, the frame member 102 provides a protection for the photoacceptor units 101 b in the process for manufacturing the electronicdevice 108, and the removal of the frame member 102 after the productionof the electronic device 108 is not required. Therefore, an additionaloperation for removing the frame member 102 can be omitted, so that theelectronic device 108 exhibiting an improved reliability can be obtainedwithout a need for conducting additional manufacturing processes.

While the exemplary implementation of the resin film 102 a having thethickness of 0.08 mm is shown in the present embodiment, the thicknessof the resin film 102 a may be suitably selected, and the height of theframe member 102 may be selected to be equal to or larger than 0.08 mm,and more preferably thicker resin film 102 a of 0.1 mm or thicker may beemployed. In addition, while the exemplary implementation employing asingle layer of the resin film 102 a is illustrated in the presentembodiment, the resin film 102 a may include any number of layers.

Second Embodiment

FIGS. 7A to 7C are cross-sectional views, illustrating a manufacturingprocess for an electronic device in second embodiment. While firstembodiment is configured to adopt the protective tape 107, the presentembodiment is configured to adopt a protective glass 207. Otherconfigurations of the present embodiment are similar to that employed infirst embodiment.

The protective glass 207 is formed on a plane commonly formed by theupper surface of the frame member 102 and the upper surface of theencapsulating resin layer 106. An optically transparent glass may beemployed for the protective glass 207.

In the process for manufacturing the electronic device 208 having suchconfiguration, the similar manufacturing process operations shown inFIG. 2A to FIG. 4B for manufacturing the electronic device 108 in theprevious embodiment may also employed. Here, manufacturing processoperations after the operations shown in FIG. 2B will be described.

First of all, as shown in FIG. 7A, the protective glass 207 is adheredto cover the upper surface of the frame member 102 and the upper surfaceof the encapsulating resin layer 106. Here, the adhesion of theprotective glass 207 is achieved with an adhesive agent having a heatresistance at a temperature of not lower than its reflow temperature.Next, as shown in FIG. 7B, each of a plurality of electronic devices 208formed on the lead frame 104 is diced out to obtain the electronicdevices 208 having desired geometry. Next, as shown in FIG. 7C, theelectronic device 208 is coupled to the base substrate 109 having theessential electric circuits formed therein by a solder 110 with a reflowprocess, and then is installed.

Since the optically transparent glass is employed for the protectiveglass 207 for the electronic device 208 in second embodiment, anadvantageous effect of eliminating unwanted operation for stripping theprotective glass 207 after the end of the reflow operation can beprovided.

The present embodiment is also configured that the upper surface of theframe member 102 and the upper surface of the encapsulating resin layer106 form a common plane, so that the electronic device 208 that iseasily provided with the protective glass 207 adhered thereon, and theprocess for manufacturing thereof, can be achieved. Other advantageouseffects of the present embodiment are similar to that obtained in theabove-described embodiment.

Third Embodiment

FIGS. 8A to 8D are cross-sectional views, illustrating a process formanufacturing an electronic device in third embodiment. Theconfiguration of the electronic device in third embodiment is similar tothat of the electronic device 108 in first embodiment.

The frame member 302 of the electronic device in third embodiment isformed by the manufacturing process as shown in FIGS. 8A to 8D. Othermanufacturing process operations in this embodiment are similar to theoperations in first embodiment. FIG. 8A to FIG. 8D correspond to FIG. 2Ato FIG. 2D, respectively. Other manufacturing process operations aresimilar to the operations in first embodiment, and thus the detaileddescription thereof is not repeated.

First of all, as shown in FIG. 8A, a wafer 101 a having a plurality oflight receiving elements 101 formed therein is prepared. The photoacceptor units 101 b are exposed in the surfaces of respective lightreceiving elements 101 arranged in the wafer 101 a. Here, among aplurality of light receiving elements 101 arranged in the wafer 101 a,only two light receiving elements 101 are illustrated in FIG. 8A. Inaddition, a resin film 302 a formed to have a film-form and composed ofa resin material that is curable by a light and a heat is prepared.Openings corresponding to the hollow sections of the frame member 302are previously bored in the resin film 302 a. Next, as shown in FIG. 8B,an alignment for the photo acceptor units 101 b is performed to besuitably positioned in the inside of the opening provided in the resinfilm 302 a, and then the entire light receiving element 101 (wafer 101a) is covered with the resin film 302 a.

Then, as shown in FIG. 8C, an exposure process is performed by employingan exposure mask 103 to pattern the resin film 302 a so as to form theframe member 302.

Further, as shown in FIG. 8D, a developing process is performed toremove the resin film 302 a except the frame members 302, so that theframe members 302 provided to surround the respective photo acceptorunits 101 b are formed. As described above, the frame member 302 can beformed by employing a photolithographic process. In addition to above,the resin composing the frame member 302 is not completely cured justafter the developing process is completed, providing a weak adhesionbetween the frame member 302 and the light receiving elements 301 with aweak adhesion force, and not providing a firm adhesion.

So that an inner hollow portion of frame member 302 is previouslyformed, a residue of the resin film 302 a inside of the frame member302, which is otherwise difficult to be completely eliminated by onlythe developing process, can be prevented. Therefore, a contamination inthe photo acceptor unit 101 b can be further inhibited, and thus theelectronic device 108 exhibiting a further improved reliability and themethod for manufacturing thereof can be achieved. While themanufacturing process, in which the inner wall and the external wall ofthe frame member 102 are simultaneously formed, is difficult to form theinner wall of the frame member 102 as being perpendicular to the surfaceof the light receiving element 101 as described in first embodiment, theuse of the frame member 302 as described in third embodiment can providea formation of the inner wall of the frame member 302 as beingperpendicular to the surface of the light receiving element 101, bypreviously forming the openings in the resin film 302 a. Thus, thedistance between the photo acceptor unit 101 b and the frame member 302can be reduced, thereby further reducing a contamination in the photoacceptor unit 101 b. In addition, further advantageous effect ofallowing a reduction in the size of the electronic device is alsoachieved.

In the present embodiment, the configuration of the electronic device isalso similar to that of first embodiment. Other advantageous effects ofthe present embodiment are similar to that obtained by theabove-described embodiment.

Fourth Embodiment

FIGS. 9A and 9B are cross-sectional views, illustrating a process formanufacturing an electronic device in fourth embodiment. Configurationof the electronic device in fourth embodiment is similar to that for theelectronic device 108 in first embodiment. The electronic device infourth embodiment is formed by the manufacturing process that isillustrated in FIGS. 9A and 9B. Other manufacturing process operationsin this embodiment are similar to the operations in first embodiment.FIGS. 9A and 9B correspond to FIGS. 4A and 4B, respectively. Othermanufacturing process operations are similar to the operations in firstembodiment, and thus the detailed description thereof is not repeated.

First of all, as shown in FIG. 9A, encapsulating metal molds 111 a and111 b having flat molding surfaces are prepared, and then a resin film412 is put on the molding surface of the encapsulating metal mold 111 aby a vacuum chucking. Successively, the light receiving elements 101 onthe lead frame 104 are fixed in predetermined positions of theencapsulating metal mold 111 a and 111 b. Next, the molding surface ofthe encapsulating metal mold 111 a compressively contacts with the uppersurface of the frame member 402, and the molding surface of theencapsulating metal mold 111 b compressively contacts with the lowersurface of the lead frame 104. More specifically, the resin film 412 isdisposed and pressed between the upper surface of the frame member 402and the molding surface of the encapsulating metal mold 111 a.

This allows reducing a gap between the upper surface of the frame member402 and the molding surface of the encapsulating metal mold 111 a and agap between the lower surface of the lead frame 104 and the moldingsurface of the encapsulating metal mold 111 b to be minimum byinterposing the resin film 412, providing close contacts therebetween.

Subsequently, as shown in FIG. 9B, staying at the condition of thecompressive-contact, an encapsulating resin melted by a heat is injectedin spaces surrounded by the molding surfaces of the encapsulating metalmolds 111 a and 111 b except the space surrounded by the frame member102 to form an encapsulating resin layer 106 that fills the periphery ofthe frame member 402. Here, an enclosed region surrounded by the framemember 402 and the encapsulating metal mold 111 a is formed in theupside of the photo acceptor unit 101 b. Further, the molding surface ofthe encapsulating metal mold 111 a and the upper surfaces of the framemember 402 are closely contacted with an external force by a clampingpressure, and the light receiving element 101 and the frame member 402are strongly adhered as described above. Thus, an unwanted flow of theencapsulating resin into the interior of the frame member 402 or inother words into the enclosed region formed in the upside of the photoacceptor unit 101 b can be prevented.

Subsequently, the encapsulating metal molds 111 a and 111 b are removedto obtain the light receiving element 101 as shown in FIG. 9B. Morespecifically, a plurality of light receiving elements 101 on the leadframe 104 are totally encapsulated. Since the resin film 412 is chuckedto the encapsulating metal mold 111 a in such occasion, the film is notremained on the upper surface of the frame member 402 or on the uppersurface of the encapsulating resin layer 106.

In the present embodiment, an elastic modulus of the frame member 402 is9 GPa. Therefore, an improved stiffness of the frame member 402 isachieved to provide a further strengthened protection for a permeationof the encapsulating resin into the hollow portion in the frame member402, providing a further improved protection for the photo acceptor unit101 b.

When the elastic modulus of the frame member 402 of equal to or higherthan 6 GPa is employed without employing the configuration of thepresent embodiment, a sufficient elastic deformation of the frame member402 cannot possibly be presented against a direct clamp-pressurizing forthe upper surface of the frame member 402 with the encapsulating metalmold 111 a as described above, so that it is possible to exert anexternal force generated by the clamping pressure over the lightreceiving element 101. This may cause a breakdown of the light receivingelement 101, impairing the function of the photo acceptor unit 101 b,and further possibly causing deterioration in environmental tests. Onthe contrary, since the resin film 412 is interleaved between the uppersurface of the frame member 402 and the molding surface of theencapsulating metal mold 111 a in the present embodiment, the resin film412 functions as a cushioning material, so that defective situationstypically as a breakdown of the light receiving element 101 or adisturbance of the function of the photo acceptor unit 101 b can beavoided.

Since the available range of the elastic modulus of the frame member 402is equal to or higher than 6 GPa, a degree of flexibility in selecting aresin for the the first resin as a material of the frame member 402 canbe increased. Further advantage is that an increased stiffness of theframe member 402 can be presented since the frame member 402 is composedof the material of the resin having the elastic modulus of thecompletely cured resin of 9 GPa, so that a further strengthenedprotection for a permeation of the encapsulating resin into the photoacceptor unit 101 b can be achieved during the encapsulating process.

Here, the elastic modulus of frame member 402 means an elastic modulusof the product in the status of completely cured by a light and a heat.The frame member 402 is composed of the first resin. The first resin isa cured product of a resin material that is curable by a light and aheat cure. The resin materials that are curable by a light and a heatinclude photo-reactive resins such as acrylic resins and heat-reactiveresins such as epoxy resins.

The elastic modulus of the resin film 412 is 3 GPa. Therefore, the resinfilm 412 is elastically deformed to function as a cushioning materialwhen the upper surface of the frame member 402 is pressed to theencapsulating metal mold 111 a, so that the photo acceptor units 101 areprotected. Light receiving element 101 can be protected.

While the exemplary implementation having the resin film 412 disposedbetween the upper surface of the frame member 402 and the moldingsurface of the encapsulating metal mold 111 a is illustrated in thepresent embodiment, a similar resin film may alternatively be disposedbetween the lower surface of the lead frame 104 and the molding surfaceof the encapsulating metal mold 111 b and may be pressed againstthereof. Such alternative configuration prevents the meltedencapsulating resin from entering into a gap between the lower surfaceof the lead frame 104 and the molding surface of the encapsulating metalmold 111 b.

Fifth Embodiment

FIG. 10A is a perspective view, illustrating an electronic device infifth embodiment, and FIG. 10B is a cross-sectional view along lineIII-III′ in FIG. 10A. While the first embodiment is configured that theupper surface of the frame member and the upper surface of theencapsulating resin layer form a common plane, the present embodiment isconfigured that the upper surface of the frame member is higher than theupper surface of the encapsulating resin layer and protrudes toward theupper side. A process for manufacturing the electronic device in fifthembodiment is similar to the process for manufacturing the electronicdevice in first embodiment as shown in FIG. 2A to FIG. 5C.

A variation of a height of a frame member 502 in the process formanufacturing an electronic device in experimental manufactures wasabout 10 micrometer by standard deviation. Here, the variation of theheight of the frame member 502 is a difference in the height of theframe member 502, which is possibly caused due to changes in lightintensity in an exposure process or changes in type of developingsolution or in processing time in an developing process during theoperation of forming the frame member 502 in the process for forming thefilm composed of the first resin and having a uniform thickness by aphotolithographic process. Taking such variation of height in themanufacturing process into account, if the minimum height of the framemember 502 is designed to be not higher than the encapsulating resinlayer 106, the second resin (encapsulating resin) may possibly beentered in the interior of the frame member 502, destroying the hollowportion.

On the contrary, in the electronic device of the present embodiment, theupper surface of the frame member 502 is higher than the upper surfaceof the encapsulating resin layer 106 by 10 micrometers to 60micrometers, as shown in FIG. 10A. The height of the frame member 502that satisfies the above-described criterion may be obtained bydesigning the frame member 502 to be higher than the upper surface ofthe encapsulating resin layer 106 by about 30 micrometers, which isthreefold of the standard deviation of the variation in the height ofthe frame member 502. Such design of the height of the frame member 502may also be suitably achieved by suitably adjusting a pressure forpressing against the frame member 502 in the encapsulating operation orthe like.

Advantageous effects obtained in the electronic device of fifthembodiment are similar to that obtained in first embodiment. Inaddition, even if the upper surface of frame member 502 is higher thanthe upper surface of the encapsulating resin layer 106 by threefold ofthe standard deviation of the variation in the height of the framemember 502, unwanted permeation of the encapsulating resin into thehollow portion of the frame member 502 can be inhibited, and thereforethe configuration of the present embodiment can provide the electronicdevice that exhibits an improved reliability. Consequently, even if avariation in the height of the frame member 502 of about 10 micrometersby standard deviation is caused in the process for manufacturing theelectronic device, an unwanted permeation of the encapsulating resin inthe interior of the frame member 502, which leads to a breakdown of thehollow portion and a contamination of the photo acceptor unit 101 b, canbe inhibited.

Further, as shown in FIG. 10B, the configuration of the upper surface ofthe frame member 502, which is higher than the upper surface of theencapsulating resin layer 106 can provide a larger pressure applied tothe frame member 502 when the frame member is pressed against themolding surfaces of the encapsulating metal molds 111 a and 111 b (seeFIG. 4A). Therefore, a further strengthened protection for a permeationof the encapsulating resin into the hollow portion in the frame member502 can be achieved, providing a further improved protection for thephoto acceptor unit 101 b.

Sixth Embodiment

FIGS. 11A to 11G are cross-sectional views, illustrating a manufacturingprocess of an electronic device in sixth embodiment.

While the frame member in first embodiment is formed of a single layerof the first resin, an electronic device in sixth embodiment isconfigured that a frame member is formed of laminated two plies of filmscomposed of first resin and thus is configured of double layers havinglarger height. Other configurations of the present embodiment aresimilar to first embodiment. A frame member 602 of the electronic devicein sixth embodiment is formed by the manufacturing process that isillustrated in FIGS. 11A to 11G. Other manufacturing process operationsare similar to the operations in first embodiment, and thus the detaileddescription thereof is not repeated.

First of all, as shown in FIG. 11A, a wafer 101 a is prepared.

The wafer 101 a is provided with a plurality of light receiving elements101 formed therein, and photo acceptor units 101 b are exposed in thesurfaces of respective light receiving elements 101. Here, among aplurality of light receiving elements 101 arranged in the wafer 101 a,only two light receiving elements 101 are illustrated in FIG. 11A, andtwo photo acceptor units 101 b are exposed.

Next, as shown in FIG. 11B, resin films 602 a and 602 b formed to have afilm-form having a thickness of 0.06 mm and composed of a resin materialthat is curable by a light and a heat are prepared. The resin film 602 aand the resin film 602 b are passed through a roll 603 a and a roll 603b of a roller while a pressure is exerted thereon by a roll laminatorprocess to obtain a laminated member so that a resin film 602 c havingsubstantially no “distortion” or “wrinkle” is obtained. Since a filmhaving uniform thickness is employed for each of the resin films 602 aand 602 b, the resin film 602 c composed of the laminated member of theresin film 602 a and the resin film 602 b is also a film having auniform thickness (FIG. 11C).

Next, as shown in FIG. 11D, the resin film 602 c is installed on thelight receiving element 101 (wafer 101 a) by a vacuum laminator processso that substantially no bubble or the like is generated in the contactsurface between the resin film 602 c and the wafer 101 a, therebycovering the entire wafer 101 a with the resin film 602 c. The thicknessof the resin film 602 c is 0.12 mm.

Then, as shown in FIG. 11E, an exposure process is performed byemploying an exposure mask 103 to pattern the resin film 602 c, therebyforming the frame member 602.

Further, as shown in FIG. 11F, a developing process is performed topartially remove the resin film 602 c except the corresponding portionsof the frame members 602, so that the frame members 602 provided tosurround the associated photo acceptor units 101 b are formed. Anexperimental manufacture shows that the frame member 602 of the resinfilm 602 c, which is composed a laminated member of the resin film 602 aand the resin film 602 b, can be formed by employing a photolithographicprocess.

Advantageous effects obtained in the electronic device of sixthembodiment are similar to that obtained in first embodiment. In thepresent embodiment, the resin film 603 c is composed of dual-layeredfilm-form resins of the first resin. This allows ensuring the sufficientthickness of resin film 603 c to be equal to or larger than 0.08 mm.Solvent employed in handling the first resin is necessary to be removedfor providing a form of a film. In consideration of the removal of thesolvent, a use of a thicker resin film 603 c having a thickness oflarger than 0.08 mm causes a difficulty in removing the solventtherefrom. More specifically, it is difficult to eliminate a solventfrom a product such as a film. Consequently, the use of the laminatedmember of the two films having a thickness of equal to or less than 0.08mm, which allows easier removal of the solvent and easier processing, orin other words, the use of the laminated member of the film-formed firstresins, provides an increased film thickness of the resin film 603 c.

In addition, the lamination process of the resin films 602 a and 602 bis completed in advance before forming the laminated resin film 602 c onthe wafer 101 a, so that a creation of a “distortion” or a “wrinkle” inthe resin films 602 a and 602 b (resin film 602 c) due to anadhesiveness or a stickiness between the resin films 602 a and 602 b canbe reduced. More specifically, in the case of forming the resin films602 a and 602 b in sequence on the wafer 101 a, when the first ply ofresin film, namely the resin film 602 a for example, is formed and thenthe second ply of resin film, namely the resin film 602 b for example,is formed, a creation of a “distortion” or a “wrinkle” in the resinfilms 602 a and 602 b (resin film 602 c) due to the stickiness of theresin films 602 a and 602 b can be reduced.

In addition, the above-mentioned roll laminator process may be employedfor forming the laminated member of the resin films 602 a and 602 b. Theroll laminator process provides limited locations of the pressed sitesin the resin films 602 a and 602 b, and thus, even if the stickiness ofthe resin films causes a “distortion” or a “wrinkle”, such smaller“distortion” or “wrinkle” may be compensated to larger non-pressed sitesin the resin films 602 a and 602 b, resulting in forming the laminatedmember of the resin films with substantially no “distortion” or“wrinkle”.

Alternatively, a vacuum laminator process may also be employed in theprocess for forming the laminated member of the resin film 602 c on thewafer 101 a. More specifically, a use of the vacuum laminator processallows an easier defoaming from the interface between the wafer 101 aand the resin film 602 c, and also allows uniformly pressurizing overthe entire wafer 101 even if a thinner wafer 101 a is employed, therebyavoiding a crack created in the wafer 101 a.

The use of the laminated member of the resin films for forming the framemember 602 allows providing an increased height of the frame member 602,which leads to an increased distance between an apex of the metalfilament 105 and the encapsulating metal molds 111 a and 111 b, so thatan unwanted contact with the metal filament 105 can be prevented with anincreased distance (see FIG. 11G). Further, an increased height of theframe member 602 allows providing an increased flexibility in the designfor the heights of the encapsulating resin layer 106 and the framemember 602. As described in first embodiment, the permitted differencebetween the vertical dimension (height) of the frame member 602 and thevertical dimension (thickness) of the encapsulating resin layer 106 isequal to or smaller than 0.05 mm. While maintaining such range of thepermitted difference in the vertical dimension, the vertical dimensionor the height of the frame member 602 itself may be further increased byincreasing the vertical dimension or the thickness of the encapsulatingresin layer 106. Such increased height of the frame member 602 provideslarger elastic deformation of the frame member 602, leading to acreation of larger reactive force, which, in turn, creates a strongercontact between the frame member 602 and the encapsulating metal mold111 a, thereby preventing the encapsulating resin layer 106 fromentering in the interior of the frame member 602. Conversely, suchincrease in the height of the frame member 602 ensures sufficientthickness of the encapsulating resin layer 106, leading to providingsufficient protection with the encapsulating resin without exposing thelight receiving element 101 and the metal filament 105, while ensuringthe height of the frame member 602 from the encapsulating resin layer106 to be up to 0.05 mm.

The electronic device and the process for manufacturing thereofaccording to the present invention are not limited to theabove-described embodiments, and various modifications may be available.

While the exemplary implementations for employing the light receivingelements 101, which are the elements available in digital video disc(DVD) systems, are, for example, illustrated in the above-describedembodiments, imaging devices employed for digital video cameras ordigital still cameras, various types of micro-electro mechanical systems(MEMS) and electro-acoustic filters utilizing an electric oscillationmay also be employed. Further, the configurations of the presentinvention may also be employed for semiconductor devices that requiresan air space around the elements, which is requires due to a requirementfor a lower dielectric constant. In addition, while the base member isdescribed by illustrating a lead frame, the base member is not limitedto lead frames, and a resin substrate or a film-form substrate, forexample, may alternatively be adopted.

It is apparent that the present invention is not limited to the aboveembodiment, and may be modified and changed without departing from thescope and spirit of the invention.

1. An electronic device, comprising: an element; a frame member composedof a first resin provided so as to surround a functional unit of saidelement; and a resin layer composed of a second resin and filling aperiphery of said frame member, wherein said functional unit of saidelement is exposed in a space surrounded by said frame member, andwherein an upper surface of said frame member and an upper surface ofsaid resin layer form a common plane, or the upper surface of said framemember is located to be higher than the upper surface of said resinlayer.
 2. An electronic device, comprising: an element; a frame membercomposed of a first resin provided so as to surround a functional unitof said element; and a resin layer composed of a second resin andfilling a periphery of said frame member, wherein said functional unitof said element is exposed in a space surrounded by said frame member,and wherein an upper surface of said frame member is located to behigher than an upper surface of said resin layer.
 3. The electronicdevice as set forth in claim 1, wherein said first resin is a curedproduct of a resin that is curable by a light and a heat.
 4. Theelectronic device as set forth in claim 1, wherein an elastic modulus ofa cured product of said first resin is within a range of from 1 GPa to 6GPa at 20 degree C., and is within a range of from 10 MPa to 3 GPa at200 degree C.
 5. The electronic device as set forth in claim 1, whereinsaid first resin is a film-form resin.
 6. The electronic device as setforth in claim 1, wherein the upper surface of said frame member islocated to be higher than the upper surface of said resin layer by alength within a range of from 0 mm to 0.05 mm.
 7. The electronic deviceas set forth in claim 1, wherein a height of said frame member is equalto or larger than 0.05 mm.
 8. The electronic device as set forth inclaim 1, wherein a plane formed by the upper surface of said framemember and the upper surface of said resin layer is covered with aprotective film.
 9. The electronic device as set forth in claim 8,wherein said protective film is formed of a strippable resin.
 10. Theelectronic device as set forth in claim 8, wherein said protective filmis composed of an optically transparent material.
 11. A method formanufacturing an electronic device, including: forming a resin film overa wafer, which has a plurality of elements formed therein; patterningsaid resin film to form a frame member, which is composed of a firstresin and is provided to surround a functional unit of said element; andproviding an encapsulation, comprising: installing said element over abase member; pressing molding surfaces of encapsulating metal mold sagainst an upper surface of said frame member and a lower surface ofsaid base member, respectively; and injecting a second resin intoportions of spaces surrounded by the molding surface of saidencapsulating metal mold except the portion surrounded by said framemember to fill a periphery of said frame member therewith.
 12. Themethod for manufacturing the electronic device as set forth in claim 11,wherein said forming the resin film includes: laminating said pluralityof film-form first resins; and disposing said laminated film-form firstresins over the wafer.
 13. The method for manufacturing the electronicdevice as set forth in claim 12, wherein said laminating the firstresins includes laminating said plurality of film-form first resins by aroll laminator process, and wherein said disposing the first resinsincludes disposing said laminated film-form first resins over the waferby a vacuum laminator process.
 14. The method for manufacturing theelectronic device as set forth in claim 11, further including forming aprotective film over an upper surface of said frame member and over anupper surface of said resin layer.
 15. The method for manufacturing theelectronic device as set forth in claim 11, wherein said resin film hasa previously formed opening.
 16. The method for manufacturing theelectronic device as set forth in claim 11, wherein a film is disposedand pressed between the upper surface of said frame member and a moldingsurface of said encapsulating metal mold in said providing theencapsulation.
 17. The method for manufacturing the electronic device asset forth in claim 16, wherein a film is disposed and pressed betweenthe lower surface of said base member and a molding surface of saidencapsulating metal mold in said providing the encapsulation.
 18. Themethod for manufacturing the electronic device as set forth in claim 11,further comprising dividing said base member into respective elementsafter said providing the encapsulation.